SPACE-CHARGE RECOMBINATION OSCILLATIONS IN SILICON

被引:14
作者
MOORE, JS
HOLONYAK, N
SIRKIS, MD
BLOUKE, MM
机构
关键词
D O I
10.1063/1.1754845
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:58 / &
相关论文
共 6 条
[1]   GOLD AS A RECOMBINATION CENTRE IN SILICON [J].
FAIRFIELD, JM ;
GOKHALE, BV .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+
[2]  
GERASIMO.AB, 1965, FIZ TVERD TELA+, V7, P526
[3]  
KONSTANTINOV OV, 1965, FIZ TVERD TELA+, V6, P2691
[4]   VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J].
LAMPERT, MA ;
ROSE, A .
PHYSICAL REVIEW, 1961, 121 (01) :26-&
[5]  
MOORE JB, TO BE PUBLISHED
[6]   ELECTRICAL OSCILLATIONS IN SILICON COMPENSATED WITH DEEP LEVELS [J].
MOORE, JS ;
PENCHINA, CM ;
HOLONYAK, N ;
SIRKIS, MD ;
YAMADA, T .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :2009-&