TEMPERATURE CONTROL DURING CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE SILICON WITH SUBSTRATE HEATING BY MICROWAVES

被引：11

作者：

BUCHTA, R ^{[1
]}

ZHANG, SL ^{[1
]}

SIGURD, D ^{[1
]}

LINDGREN, K ^{[1
]}

机构：

[1] VACUTEC AB,S-23351 SVEDALA,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contactless and accurate measurement of the temperature is an important issue in rapid thermal processing. In this letter we report on the variation of the emissivity of the surface during chemical vapor deposition of polycrystalline silicon onto oxidized silicon wafers. The observed periodic change in the emissivity of the polycrystalline silicon/silicon dioxide/silicon structure is due to interference phenomena in the growing layer. In these experiments the silicon wafers were heated by direct absorption of microwaves in a single wafer reactor. It is shown that with this method of heating, the change of emissivity does not influence the actual temperature of the substrate.

引用

页码：3153 / 3155

页数：3