STRESS IN NBCXN1-X FILMS PREPARED BY REACTIVE RF MAGNETRON SPUTTERING

被引：9

作者：

KIRYU, S ^{[1
]}

SHOJI, A ^{[1
]}

KOHJIRO, S ^{[1
]}

KODAIRA, S ^{[1
]}

机构：

[1] KISARAZU NATL COLL TECHNOL,KISARAZU,CHIBA 292,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 6B期

关键词：

STRESS; NBC(X)N(1-X) FILMS; RF MAGNETRON SPUTTERING; X-RAY DIFFRACTION; SURFACE MORPHOLOGY;

D O I：

10.1143/JJAP.32.L834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stress in reactively sputter-deposited NbCxN1-x films was measured. It was found that the stress in NbCxN1-x films strongly depended on the total sputtering gas pressure Pt. Films deposited at P(t) greater-than-or-equal-to 2.0 Pa had very small stress values (<2.0 X 10(8) Pa). On the other hand, films deposited at P(t) less-than-or-equal-to 1.1 Pa had large compressive stress values. The results of X-ray diffraction measurements showed that the stress in NbCxN1-x films was strongly related to the ratio of (111) and (200) grains in the films. We also observed the surface morphology of deposited films by scanning electron microscopy and found that the stress in deposited films is affected by the microstructure of the films.

引用

页码：L834 / L836

页数：3

共 8 条

[1] STRESS AND RESISTIVITY CONTROL IN SPUTTERED MOLYBDENUM FILMS AND COMPARISON WITH SPUTTERED GOLD [J].