IMPROVEMENTS IN STRAIN-BALANCED INGAAS/GAAS OPTICAL MODULATORS FOR 1047-NM OPERATION

被引：13

作者：

GOODWILL, DJ ^{[1
]}

WALKER, AC ^{[1
]}

STANLEY, CR ^{[1
]}

HOLLAND, MC ^{[1
]}

MCELHINNEY, M ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.110886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a self-electro-optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13-V reverse bias, and have found 99% photodetection quantum efficiency under the built-in junction field. Bistability in a resistor-SEED configuration is demonstrated.

引用

页码：1192 / 1194

页数：3

共 12 条

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