DEFECT-FREE MODULATOR AT 1.06-MU-M USING A STRAIN-BALANCED MULTIQUANTUM WELL

被引:10
作者
GOOSSEN, KW
CUNNINGHAM, JE
JAN, WY
机构
关键词
OPTICALM MODULATION; SEMICONDUCTOR DEVICES; OPTOELECTRONICS;
D O I
10.1049/el:19921169
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, the authors reported defect-free, InGaAs-GaAsP multiquantum well modulators operating at 1015 nm, but with an unusual dual-peak spectra that resulted in slight degradation in performance. In the Letter, a similar sample grown under reactor gas overpressure that has normal spectra is reported. The dual-peak spectra are therefore attributed to microscopic domain formation that the gas overpressure inhibits by reducing surface atom mobility. The operation has also been extended to 1.06-mu-m, the Nd : YAG wavelength.
引用
收藏
页码:1833 / 1834
页数:2
相关论文
共 5 条
[1]   DIRECT DEMONSTRATION OF A MISFIT STRAIN-GENERATED ELECTRIC-FIELD IN A [111] GROWTH AXIS ZINCBLENDE HETEROSTRUCTURE [J].
CARIDI, EA ;
CHANG, TY ;
GOOSSEN, KW ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :659-661
[2]   PSEUDOMORPHIC INGAAS-GAASP QUANTUM-WELL MODULATORS ON GAAS [J].
CUNNINGHAM, JE ;
GOOSSEN, KW ;
WILLIAMS, M ;
JAN, WY .
APPLIED PHYSICS LETTERS, 1992, 60 (06) :727-729
[3]   ELECTROABSORPTION IN THE TYPE-II SUPERLATTICES [J].
LI, SZ ;
KHURGIN, JB .
APPLIED PHYSICS LETTERS, 1992, 60 (16) :1969-1971
[4]   INXGA1-XAS/GAAS MULTIPLE QUANTUM-WELL OPTICAL MODULATORS FOR THE 1.02-1.07-MU-M WAVELENGTH RANGE [J].
WOODWARD, TK ;
SIZER, T ;
SIVCO, DL ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1990, 57 (06) :548-550
[5]   REDUCTION OF LASING THRESHOLD CURRENT-DENSITY BY THE LOWERING OF VALENCE BAND EFFECTIVE MASS [J].
YABLONOVITCH, E ;
KANE, EO .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (05) :504-506