MOBILITY OF ELECTRONS IN HG1-XCDXTE

被引：18

作者：

CHATTOPA.D ^{[1
]}

NAG, BR ^{[1
]}

机构：

[1] UNIV CALCUTTA, CTR ADV STUDY RADIO PHYS & ELECTR, CALCUTTA-9, INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1463 / 1465

页数：3

共 18 条

[1]

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[2]

ALIEV SA, 1970, SOV PHYS SEMICOND+, V4, P975

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BAARS, J ;

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MITRA, SS .

PHYSICAL REVIEW, 1968, 172 (03) :924-&

[5] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[6] RESTRAHLEN REFLECTION IN HGTE [J].

DICKEY, DH ;

MAVROIDES, JG .

SOLID STATE COMMUNICATIONS, 1964, 2 (08) :213-215

[7] SCREENING EFFECTS IN POLAR SEMICONDUCTORS [J].

EHRENREICH, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :130-135

[8] INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN-EFFECT CHARACTERISTIC IN GAAS IN DISPLACED MAXWELLIAN APPROXIMATION [J].

HEINLE, W .

PHYSICS LETTERS A, 1969, A 29 (03) :131-&

[9]

Ivanov-Omskii V. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P264

[10]

IVANOVOMSKII VI, 1970, SOV PHYS SEMICOND+, V4, P214

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