HYPERFINE INTERACTION IN PHOSPHORUS-DOPED AMORPHOUS-SILICON GERMANIUM ALLOYS

被引：8

作者：

FINGER, F

FUHS, W

CARIUS, R

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1988年 / 57卷 / 04期

关键词：

D O I：

10.1080/09500838808214713

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：235 / 240

页数：6

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[1] THE ANNEALING BEHAVIOR OF THE G=2.0026 ELECTRON-SPIN-RESONANCE LINE IN A-SI-H
CARLOS, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 157 - 161
[2] ELECTRON-SPIN-RESONANCE (ELECTRON-SPIN-RESONANCE AND LESR) STUDIES IN A-SI1-XGEX-H
FINGER, F
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 731 - 734
[3] DEFECT STATES IN A-SI1-XGEX-H STUDIED BY ELECTRON-SPIN RESONANCE
FINGER, F
FUHS, W
BECK, G
CARIUS, R
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1015 - 1018
[4] P-RELATED DEFECTS IN P-DOPED ALPHA-SI-H
ISHII, N
KUMEDA, M
SHIMIZU, T
[J]. SOLID STATE COMMUNICATIONS, 1985, 53 (06) : 543 - 546
[5] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H
STREET, RA
BIEGELSEN, DK
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 969 - 984
[6] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
STUTZMANN, M
BIEGELSEN, DK
STREET, RA
[J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5666 - 5701
[7] ENERGY LOCATION OF ELECTRON-SPIN-RESONANCE HYPERFINE CENTERS OF P-DOPED A-SI-H
YAMASAKI, S
KURODA, S
OKUSHI, H
TANAKA, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 339 - 342
[8] [No title captured]