DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM

被引：226

作者：

STUTZMANN, M

BIEGELSEN, DK

STREET, RA

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.35.5666

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5666 / 5701

页数：36

共 128 条

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