TRENCH SIDEWALL IMPLANTATION WITH A PARALLEL SCANNED ION-BEAM

被引：17

作者：

KAKOSCHKE, R ^{[1
]}

KAIM, RE ^{[1
]}

VANDERMEULEN, PFHM ^{[1
]}

WESTENDORP, JFM ^{[1
]}

机构：

[1] VARIAN EXTRION DIV,BEVERLY,MA 01915

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期

关键词：

D O I：

10.1109/16.52441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sidewalls of trenches on 100-mm wafers were doped by implantation with an implanter whose beam scan is accurately parallel over the whole wafer surface. The doping was characterized with a staining technique and transmission electron microscopy. All the trenches exhibited symmetrical doping, with the main differences between trenches from the center and edge of a wafer being due to nonuniformity of the trench etching rather than the implant step. © 1990 IEEE

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页码：1052 / 1056

页数：5

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