DEPTH PROFILES OF BORON ATOMS WITH LARGE TILT-ANGLE IMPLANTATIONS

被引：26

作者：

FUSE, G

UMIMOTO, H

ODANAKA, S

WAKABAYASHI, M

FUKUMOTO, M

OHZONE, T

机构：

[1] Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn

来源：

关键词：

D O I：

10.1149/1.2108785

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：996 / 998

页数：3

共 5 条

[1] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H ;

MATSUMURA, H .

[2]

FURUKAWA S, 1973, ION IMPLANTATION SEM, P193

[3]

Fuse G., 1985, VLSI S, P58

[4] RANGE PARAMETERS OF BORON IMPLANTED INTO SILICON [J].

RYSSEL, H ;

PRINKE, G ;

HABERGER, K ;

HOFFMANN, K ;

MULLER, K ;

HENKELMANN, R .

APPLIED PHYSICS, 1981, 24 (01) :39-43

[5]

Shibata T., 1983, International Electron Devices Meeting 1983. Technical Digest, P27