MONOCRYSTALLINE POLYCRYSTALLINE SILICON EMITTERS FOR IPOLAR TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

Molecular beam epitaxial silicon was used to grow epitaxial and polysilicon emitters in self-aligned bipolar transistors with the "double poly" structure. The emitter characteristics of the transistors were compared with various types of polysilicon emitters grown by low pressure chemical vapour deposition. It is shown that the molecular beam epitaxial silicon emitter provides the lowest emitter series resistance and has an adequate emitter efficiency. © 1990.