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CORRELATION BETWEEN PHOTOLUMINESCENCE AND SURFACE SPECIES IN POROUS SILICON - LOW-TEMPERATURE ANNEALING

被引：102
作者：
TSYBESKOV, L
FAUCHET, PM
机构：
[1] Department of Electrical Engineering, University of Rochester, Rochester
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期
关键词：
D O I：
10.1063/1.111714
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) and Fourier-transform infrared (FTIR) measurements have been performed on light-emitting porous silicon (LEPSi) after annealing at temperatures below 600-degrees-C. Two different kinds of samples with different surface morphologies and different initial concentrations of chemically bonded hydrogen were studied. In hydrogen-rich samples we have observed an increase of PL intensity at temperatures up to 250-degrees-C, which correlated with an increase of Si-H bond concentration. A correlation between PL peak wavelength and the ratio of Si-O bonds over Si-H bonds has been demonstrated.
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页码：1983 / 1985
页数：3
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