THEORETICAL FORMALISM TO UNDERSTAND THE ROLE OF STRAIN IN THE TAILORING OF HOLE MASSES IN P-TYPE INXGA1-XAS (ON GAAS SUBSTRATES) AND IN0.53+XGA0.47-XAS (ON INP SUBSTRATES) MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：18

作者：

JAFFE, M

SEKIGUCHI, Y

SINGH, J

机构：

来源：

关键词：

D O I：

10.1063/1.98308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1943 / 1945

页数：3

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