LIGHT-INDUCED CONDUCTIVITY CHANGES IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：11

作者：

YOON, JH ^{[1
]}

KIM, MS ^{[1
]}

LEE, CC ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,SEOUL 131,SOUTH KOREA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90674-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：636 / 638

页数：3

共 8 条

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[6] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

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[7] EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J].

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[8]

STREET RA, 1986, PHYS REV B, V34, P1602

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