PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS

被引：148

作者：

KAKALIOS, J ^{[1
]}

FRITZSCHE, H ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.53.1602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1602 / 1605

页数：4

共 15 条

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[9] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

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[10] OPTICALLY INDUCED EXCESS CONDUCTIVITY IN COMPENSATED A-SI-H FILMS [J].

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