REFLECTANCE MODULATION IN GE AND GAAS BY OPTICAL CARRIER INJECTION

被引：18

作者：

NILSSON, NG

机构：

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 05期

关键词：

D O I：

10.1016/0038-1098(69)90212-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The modulation of the reflectance of Ge and GaAs at photon energies near and above the direct absorption edge by photo-injection of carriers is reported. The experiments indicate that the modulation is mainly an electroreflectance effect caused by a change in the bending of the bands when carriers are injected. © 1969.

引用

页码：479 / &

共 19 条

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