LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS

被引：41

作者：

HARRICK, NJ

机构：

来源：

关键词：

D O I：

10.1063/1.1722285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1439 / 1442

页数：4

共 10 条

[1] LIFETIME OF ELECTRONS IN P-TYPE SILICON
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[2] BURTON, 1953, J PHYS CHEM-US, V57, P853
[3] FAN HY, 1954, PHYS REV, V93, P1434, DOI 10.1103/PhysRev.93.1434.7
[4] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS
FAN, HY
[J]. PHYSICAL REVIEW, 1953, 92 (06): : 1424 - 1428
[5] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
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[6] USE OF INFRARED ABSORPTION IN GERMANIUM TO DETERMINE CARRIER DISTRIBUTIONS FOR INJECTION AND EXTRACTION
HARRICK, NJ
[J]. PHYSICAL REVIEW, 1956, 103 (05): : 1173 - 1181
[7] USE OF INFRARED ABSORPTION TO DETERMINE CARRIER DISTRIBUTION IN GERMANIUM AND SURFACE RECOMBINATION VELOCITY
HARRICK, NJ
[J]. PHYSICAL REVIEW, 1956, 101 (01): : 491 - 492
[8] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON
HORNBECK, JA
HAYNES, JR
[J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321
[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[10] MEASUREMENT OF MINORITY CARRIER LIFETIME IN SILICON
WATTERS, RL
LUDWIG, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 489 - 496