CADMIUM-TIN OXIDE-FILMS DEPOSITED BY RF SPUTTERING FROM A CDO-SNO2 TARGET

被引：25

作者：

MIYATA, N

MIYAKE, K

FUKUSHIMA, T

KOGA, K

机构：

[1] Faculty of Engineering, Yamaguchi University, Ube

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cadmium-tin oxide (CTO) films with high conductivity and high transparency were prepared by rf sputtering from a CdO-SnO2 target in an Ar or Ar-O2 atmosphere. The resistivity of CTO films was 6.5×10 -4 Ω in the film thickness range of 2500-15000 Å, and the average transmission was 90% over the visible region.

引用

页码：542 / 543

页数：2

共 6 条

[1] SPUTTER DEPOSITION AND CHARACTERIZATION OF CD2SNO4 FILMS
HAACKE, G
MEALMAKER, WE
SIEGEL, LA
[J]. THIN SOLID FILMS, 1978, 55 (01) : 67 - 81
[2] HAACKE G, 1976, APPL PHYS LETT, V28, P622, DOI 10.1063/1.88589
[3] EFFECTS OF HEAT-TREATMENT ON OPTICAL AND ELECTRICAL-PROPERTIES OF INDIUM-TIN OXIDE-FILMS
HAINES, WG
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 304 - 307
[4] PROPERTIES OF CADMIUM STANNATE FILMS PREPARED BY RF SPUTTERING FROM POWDER TARGETS
LLOYD, P
[J]. THIN SOLID FILMS, 1977, 41 (01) : 113 - 120
[5] MIYATA N, 1978, JAP J APPLIED PHYS, V17, P1693
[6] OPTICAL AND ELECTRICAL PROPERTIES OF CD2SNO4 - A DEFECT SEMICONDUCTOR
NOZIK, AJ
[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 453 - &

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