INTERNAL PHOTOEMISSION-STUDIES OF METAL-POLYMER INTERFACES

被引：16

作者：

RIKKEN, GLJA ^{[1
]}

KESSENER, YARR ^{[1
]}

BRAUN, D ^{[1
]}

STARING, EGJ ^{[1
]}

DEMANDT, R ^{[1
]}

机构：

[1] PHILIPS RES LABS,5656 AA EINDHOVEN,NETHERLANDS

来源：

SYNTHETIC METALS | 1994年 / 67卷 / 1-3期

关键词：

PHOTOEMISSION; INTERFACES;

D O I：

10.1016/0379-6779(94)90022-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Internal photoemission is shown to be a valuable technique for studying electronic properties of buried metal/semiconducting polymer interfaces. The height of the observed barriers gives information on the nature of the interface, whereas the electric field dependence of the barrier height reflects important polymer properties. It is found that the barrier height is not determined by a simple electron affinity rule but by a high surface density of states.

引用

页码：115 / 119

页数：5

共 23 条

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