DISTRIBUTION COEFFICIENT OF CARBON IN MELT-GROWN GAAS

[1] BROZEL MR, 1986, APPL PHYS LETT, V49, P11

[2] BROZEL MR, 1986, ELECTRONIC MATERIALS, V2, P1301

[3] BROZEL MR, 1986, 1986 P INT C SEM 3 5, P217

[4] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 459 - 461

[5] DEKOCK AJR, 1982, HDB SEMICONDUCTORS, V3, P247

[6] DESNICA UV, 1987, I PHYS C SER, V83, P33

[7] THE BEHAVIOUR OF SOME IMPURITIES IN III-V COMPOUNDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 622 - 627

[8] GROWTH OF GAAS INGOTS WITH HIGH FREE-ELECTRON CONCENTRATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 612 - 618

[9] HANNAY NB, 1960, SEMICONDUCTORS

[10] HOBGOOD HM, 1982, 1982 P SEM 3 5 MAT E, P28

[1] BROZEL MR, 1986, APPL PHYS LETT, V49, P11

[2] BROZEL MR, 1986, ELECTRONIC MATERIALS, V2, P1301

[3] BROZEL MR, 1986, 1986 P INT C SEM 3 5, P217

[4] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 459 - 461

[5] DEKOCK AJR, 1982, HDB SEMICONDUCTORS, V3, P247

[6] DESNICA UV, 1987, I PHYS C SER, V83, P33

[7] THE BEHAVIOUR OF SOME IMPURITIES IN III-V COMPOUNDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 622 - 627

[8] GROWTH OF GAAS INGOTS WITH HIGH FREE-ELECTRON CONCENTRATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 612 - 618

[9] HANNAY NB, 1960, SEMICONDUCTORS

[10] HOBGOOD HM, 1982, 1982 P SEM 3 5 MAT E, P28