DEPTH PROFILE STUDIES OF EXTENDED DEFECTS INDUCED BY ION-IMPLANTATION IN SI AND AL

被引：24

作者：

PICRAUX, ST

FOLLSTAEDT, DM

BAERI, P

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 49卷 / 1-3期

关键词：

D O I：

10.1080/00337578008243072

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：75 / 79

页数：5

共 9 条

[1]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2]

CHALANT G, 1976, THESIS FONTENAYAUXRO

[3] HEAVY-ION RANGES IN ALUMINUM AND SILICON [J].

COMBASSON, JL ;

FARMERY, BW ;

MCCULLOCH, D ;

NEILSON, GW ;

THOMPSON, MW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :149-&

[4]

GOMEZGIRALDEZ C, 1974, APPLICATIONS ION BEA, P469

[5] ENERGY-DEPENDENCE OF DECHANNELING BY A DISLOCATION LOOP [J].

KUDO, H .

PHYSICAL REVIEW B, 1978, 18 (11) :5995-5999

[6]

Mory J., 1972, RADIAT EFF DEFECT S, V13, P57, DOI [10.1080/00337577208231161, DOI 10.1080/00337577208231161]

[7] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL [J].

PICRAUX, ST ;

RIMINI, E ;

FOTI, G ;

CAMPISANO, SU .

PHYSICAL REVIEW B, 1978, 18 (05) :2078-2096

[8]

RIMINI E, 1976, ION BEAM SURFACE LAY, V2, P597

[9]

THOMAS GJ, 1974, APPLICATION ION BEAM, P257

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