REAL-SPACE IMAGING OF THE 1ST STAGES OF FESI(2) EPITAXIALLY GROWN ON SI(111) - NUCLEATION AND ATOMIC-STRUCTURE

被引:73
作者
DEPARGA, ALV
DELAFIGUERA, J
OCAL, C
MIRANDA, R
机构
[1] Departamento de Física de la Materia, Condensaba Universidad Autónoma de Madrid -Cantoblanco, Madrid
来源
EUROPHYSICS LETTERS | 1992年 / 18卷 / 07期
关键词
ELECTRON MICROSCOPY DETERMINATIONS (INC SCANNING TUNNELING MICROSCOPY METHODS); SOLID-SOLID INTERFACES (INC BICRYSTALS);
D O I
10.1209/0295-5075/18/7/005
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The first stages of the growth of iron disilicide on Si(111) have been studied with Scanning Tunnelling Microscopy. Nucleation and growth of two-dimensional, epitaxial islands of disilicide are obtained by means of a Solid Phase Epitaxy method. Atomically resolved images show that the islands present a hexagonal closed-packed symmetry and correspond to the first stage of a new metastable cubic phase of FeSi2 which grows matching its (111) plane to the Si(111) surface. The surface of the islands shows a 2 x 2 reconstruction explained on the basis of the reduction in number of Si dangling bonds. The results allow us to visualize in the real space that metastable phases can be stabilized by heteroepitaxial growth on suitable substrates.
引用
收藏
页码:595 / 600
页数:6
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