EFFECTS OF FIELD-INDUCED HOLE-DENSITY MODULATION ON NORMAL-STATE AND SUPERCONDUCTING TRANSPORT IN YBA2CU3O7-X

被引:152
作者
XI, XX [1 ]
DOUGHTY, C [1 ]
WALKENHORST, A [1 ]
KWON, C [1 ]
LI, Q [1 ]
VENKATESAN, T [1 ]
机构
[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742
关键词
D O I
10.1103/PhysRevLett.68.1240
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The hole-density dependence of the normal-state resistivity and transition temperature T(c) of YBa2Cu3O7-x was studied using the electric field effect in ultrathin films of 1 to 8 unit cells thickness. The change in resistivity was found to bc equal to the field-induced variation in the areal carrier density, leading to a relation that the conductivity is proportional to the hole density. A similar linear dependence was also found in T(c). However, a saturation occurred in both cases but at different hole densities. The result reveals different effects of hole filling in influencing normal-state and superconducting transport of YBa2Cu3O7-x.
引用
收藏
页码:1240 / 1243
页数:4
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