LIQUID-PHASE EPITAXIALLY EFFICIENT VISIBLE EMISSION FROM HIGHLY DOPED LIQUID-PHASE EPITAXIALLY GROWN INP

被引:13
作者
HAWRYLO, FZ
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D O I
10.1063/1.91748
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O59 [应用物理学];
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页码:1038 / 1039
页数:2
相关论文
共 4 条
[1]  
BROWN KE, 1974, SOLID STATE ELECTRON, V17, P507
[2]  
HAWRYLO FZ, 1972, Patent No. 3649382
[3]  
NELSON H, 1963, RCA REV, V24, P603
[4]   CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J].
OLSEN, GH ;
ZAMEROWSKI, TJ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04) :309-375