RADIATION-DAMAGE IN GE PRODUCED BY NOBLE-GAS IONS INVESTIGATED BY SECONDARY-ELECTRON EMISSION METHOD

被引：20

作者：

HOLMEN, G ^{[1
]}

HOGBERG, P ^{[1
]}

BUREN, A ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-40220 GOTHENBURG,SWEDEN

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 24卷 / 01期

关键词：

D O I：

10.1080/00337577508239475

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：39 / 44

页数：6

共 13 条

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[7]

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[8]

HOLMEN G, 1972, NUCL INSTR METH, V101, P545

[9]

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[10] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI [J].

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