PHOTOLUMINESCENCE OF OXYGEN IN ZNTE INTRODUCED BY ION IMPLANTATION

被引:16
作者
MERZ, JL
FELDMAN, LC
机构
[1] Bell Telephone Laboratories, Inc., Murray Hill
关键词
D O I
10.1063/1.1652935
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm 2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O 18. © 1969 The American Institute of Physics.
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页码:129 / &
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