EFFECT OF VAPOR INCIDENCE ANGLES ON PROFILE AND PROPERTIES OF CONDENSED FILMS

被引:144
作者
NAKHODKIN, NG
SHALDERVAN, AI
机构
关键词
D O I
10.1016/0040-6090(72)90276-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:109 / +
页数:1
相关论文
共 34 条
[1]  
ADIROVIC.EI, 1965, DOKL AKAD NAUK SSSR+, V164, P529
[2]  
BERLAGA PY, 1959, IZV AN SSSR FIZ, V23, P676
[3]  
BLAKELY JM, 1963, SURFACE DIFFUSION PR, V10
[4]   ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].
BRODSKY, MH ;
TITLE, RS .
PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&
[5]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[6]   INFLUENCE OF OXYGEN ON SURFACE MOBILITY OF TIN ATOMS IN THIN FILMS [J].
CASWELL, HL ;
BUDO, Y .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :644-&
[7]   ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM [J].
CLARK, AH .
PHYSICAL REVIEW, 1967, 154 (03) :750-&
[8]   CRYSTAL GROWTH AND ORIENTATION IN DEPOSITS CONDENSED FROM THE VAPOUR [J].
EVANS, DM ;
WILMAN, H .
ACTA CRYSTALLOGRAPHICA, 1952, 5 (06) :731-+
[9]  
Geguzin Ya.E., 1969, POVERKHNOSTNAYA DIFF, P11
[10]   AMORPHOUS GERMANIUM AND SILICON (STRUCTURE ANDTRANSPORT PHENOMENA) [J].
GRIGOROVICI, R .
MATERIALS RESEARCH BULLETIN, 1968, 3 (01) :13-+