SUPPRESSION OF STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN N2O OXIDES

被引：23

作者：

AHN, J

KIM, J

LO, GQ

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the stress-induced leakage current (SILC) is studied in N2O gate oxide. Compared to control thermal oxide grown in O2, N2O oxide shows suppressed SILC, and the suppression is more pronounced under substrate electron injection. Moreover, the dependence of SILC on stress current density is smaller for N2O oxide. The suppressed SILC in N2O oxide is attributed to the nitrogen incorporation during N2O oxidation, which reduces the electron trap generation rate and the density of weak oxide spots.

引用

页码：2809 / 2811

页数：3

共 13 条

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