HIGH-QUALITY ULTRATHIN GATE DIELECTRICS FORMATION BY THERMAL-OXIDATION OF SI IN N2O

被引：32

作者：

AHN, J

TING, W

CHU, T

LIN, SN

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 09期

关键词：

D O I：

10.1149/1.2086070

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ultrathin metal-oxide-semiconductor (MOS) gate dielectrics have been fabricated by conventional thermal oxidation of Si in pure N2O ambient. Electrical results show that gate dielectrics prepared by this method exhibit comparable fixed charge density compared to control SiO2, but significantly reduced interface state generation and charge trapping under constant current stressing. A nitrogen incorporation at the Si/SiO2 interface is observed and suggested to be responsible for the improved characteristics.

引用

页码：L39 / L41

页数：3

共 15 条

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