THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS

被引：275

作者：

MASSOUD, HZ

PLUMMER, JD

IRENE, EA

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113648

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2685 / 2693

页数：9

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