FORMATION OF THIN SILICON-OXIDE FILMS BY RAPID THERMAL HEATING

被引:22
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PONPON, JP
GROB, JJ
GROB, A
STUCK, R
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10.1063/1.337040
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O59 [应用物理学];
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页码:3921 / 3923
页数:3
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[1]   ACTIVATION-ENERGY FOR THE PARABOLIC RATE-CONSTANT DURING SEQUENTIAL SI OXIDATION [J].
HAN, CJ ;
HELMS, CR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :516-517
[2]   THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS [J].
MASSOUD, HZ ;
PLUMMER, JD ;
IRENE, EA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1745-1753
[3]   RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J].
NULMAN, J ;
KRUSIUS, JP ;
GAT, A .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :205-207
[4]   OPTICALLY ENHANCED OXIDATION OF SEMICONDUCTORS [J].
SCHAFER, SA ;
LYON, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :494-497