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ACTIVATION-ENERGY FOR THE PARABOLIC RATE-CONSTANT DURING SEQUENTIAL SI OXIDATION
被引:15
作者
:
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
HAN, CJ
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
HELMS, CR
机构
:
[1]
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1985年
/ 132卷
/ 02期
关键词
:
D O I
:
10.1149/1.2113876
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
10
引用
收藏
页码:516 / 517
页数:2
相关论文
共 10 条
[1]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[2]
STRESS IN THERMAL SIO2 DURING GROWTH
[J].
EERNISSE, FP
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
EERNISSE, FP
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:8
-10
[3]
EFFECT OF OXIDATION-INDUCED POSITIVE CHARGES ON THE KINETICS OF SILICON OXIDATION
[J].
HAMASAKI, M
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, M
.
SOLID-STATE ELECTRONICS,
1982,
25
(06)
:479
-486
[4]
HAN CJ, UNPUB J ELECTROCHEM
[5]
SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(02)
:413
-417
[6]
A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
TIERNEY, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TIERNEY, E
;
ANGILELLO, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ANGILELLO, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(11)
:2594
-2597
[7]
SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
;
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(07)
:1146
-1151
[8]
HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN
[J].
LIE, LN
论文数:
0
引用数:
0
h-index:
0
LIE, LN
;
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
RAZOUK, RR
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(12)
:2828
-2834
[9]
MASSOUD HZ, 1983, THESIS STANFORD U, P132
[10]
OPTICAL-CONSTANTS OF SILICON AND DRY OXYGEN OXIDES OF SILICON AT 5461A
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
:968
-972
←
1
→
共 10 条
[1]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[2]
STRESS IN THERMAL SIO2 DURING GROWTH
[J].
EERNISSE, FP
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
EERNISSE, FP
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:8
-10
[3]
EFFECT OF OXIDATION-INDUCED POSITIVE CHARGES ON THE KINETICS OF SILICON OXIDATION
[J].
HAMASAKI, M
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, M
.
SOLID-STATE ELECTRONICS,
1982,
25
(06)
:479
-486
[4]
HAN CJ, UNPUB J ELECTROCHEM
[5]
SILICON OXIDATION STUDIES - MEASUREMENT OF THE DIFFUSION OF OXIDANT IN SIO2-FILMS
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(02)
:413
-417
[6]
A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
TIERNEY, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TIERNEY, E
;
ANGILELLO, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ANGILELLO, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(11)
:2594
-2597
[7]
SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
;
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(07)
:1146
-1151
[8]
HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN
[J].
LIE, LN
论文数:
0
引用数:
0
h-index:
0
LIE, LN
;
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
RAZOUK, RR
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(12)
:2828
-2834
[9]
MASSOUD HZ, 1983, THESIS STANFORD U, P132
[10]
OPTICAL-CONSTANTS OF SILICON AND DRY OXYGEN OXIDES OF SILICON AT 5461A
[J].
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
TAFT, EA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
:968
-972
←
1
→