SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON

被引：71

作者：

IRENE, EA

DONG, DW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 07期

关键词：

D O I：

10.1149/1.2131638

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1146 / 1151

页数：6

共 18 条

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[10] Silicon Oxidation Studies: The Role of H2O [J].

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