HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN

被引：101

作者：

LIE, LN

RAZOUK, RR

DEAL, BE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123687

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2828 / 2834

页数：7

共 22 条

[1] FORMATION OF 20-25A THERMAL OXIDE FILMS ON SILICON AT 950 DEGREES-1140 DEGREES C [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1370-&

[2] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].

ADAMS, AC ;

SMITH, TE ;

CHANG, CC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1787-1794

[3] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].

ARCHER, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5] THERMAL-OXIDATION KINETICS OF SILICON IN PYROGENIC H2O AND 5-PERCENT HCL-H2O MIXTURES [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :576-579

[6]

GDULA RA, 1976, J ELECTROCHEM SOC, V123, P41

[7] KINETICS OF THERMAL OXIDATION OF SILICON IN O2-N2 MIXTURES AT 1200 DEGREESC [J].

HESS, DW ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (04) :579-581

[8]

HESS DW, 1977, J ELECTROCHEM SOC, V124, P725

[9] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

HOPPER, MA ;

CLARKE, RA ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1216-1222

[10] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J].

IRENE, EA ;

DONG, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1146-1151

← 1 2 3 →