EFFECT OF OXIDATION-INDUCED POSITIVE CHARGES ON THE KINETICS OF SILICON OXIDATION

被引：35

作者：

HAMASAKI, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1016/0038-1101(82)90160-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：479 / 486

页数：8

共 18 条

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[7]

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[10]

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