IMPROVEMENT OF THIN-GATE OXIDE INTEGRITY USING THROUGH-SILICON-GATE NITROGEN ION-IMPLANTATION

被引：25

作者：

HADDAD, S

LIANG, MS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 02期

关键词：

D O I：

10.1109/EDL.1987.26551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：58 / 60

页数：3

共 8 条

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[6] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

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ADAMS, AC .

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[7] HIGH-FIELD CURRENT INDUCED-POSITIVE CHARGE TRANSIENTS IN SIO2 [J].

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[8] HOLE INJECTION AND TRANSPORT IN SIO2-FILMS ON SI [J].

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