THE STRUCTURE AND ELECTRICAL-PROPERTIES OF METAL CONTACTS ON GAAS

被引:31
作者
LILIENTALWEBER, Z [1 ]
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.583764
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1007 / 1014
页数:8
相关论文
共 20 条
[1]  
BEYERS R, 1987, J APPL PHYS, V61, P2196
[2]   A CHEMICAL AND STRUCTURAL INVESTIGATION OF SCHOTTKY AND OHMIC AU/GAAS CONTACTS [J].
COULMAN, D ;
NEWMAN, N ;
REID, GA ;
LILIENTALWEBER, Z ;
WEBER, ER ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1521-1525
[3]   MORPHOLOGY OF AU/GAAS INTERFACES [J].
LILIENTALWEBER, Z ;
WASHBURN, J ;
NEWMAN, N ;
SPICER, WE ;
WEBER, ER .
APPLIED PHYSICS LETTERS, 1986, 49 (22) :1514-1516
[4]   SCHOTTKY AND OHMIC AU CONTACTS ON GAAS - MICROSCOPIC AND ELECTRICAL INVESTIGATION [J].
LILIENTALWEBER, Z ;
GRONSKY, R ;
WASHBURN, J ;
NEWMAN, N ;
SPICER, WE ;
WEBER, ER .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :912-918
[5]  
LILIENTALWEBER Z, 1986, THIN FILMS INTERFACE, V54, P415
[6]  
LILIENTALWEBER Z, 1986, 44TH P ANN M EL MICR, P726
[7]  
LILIENTALWEBER Z, 1986, DEFECTS SEMICONDUCTO, V10
[8]  
LILIENTALWEBER Z, 1987, IN PRESS INTERFACES, V77
[9]   INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J].
LUDEKE, R ;
LANDGREN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :667-673
[10]  
MONTEIRO OR, IN PRESS J APPL PHYS