ANTIMONY-INDUCED OPTICAL-TRANSITIONS OF THE SB/GAAS(110) INTERFACE

被引：12

作者：

GOLETTI, C

CHIARADIA, P

JIAN, W

CHIAROTTI, G

机构：

[1] Dipartimento di Fisica, II Universita' di Roma, Roma

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 84卷 / 04期

关键词：

D O I：

10.1016/0038-1098(92)90490-Z

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the optical properties of the prototypical system Sb/GaAs(110), by performing Reflectance Difference measurements both on 'as grown' and annealed surfaces. In agreement with other authors, we have found that a 350-degrees-C anneal results in a higher order of the Sb epilayer. Optical transitions characteristic of one ordered antimony overlayer have been observed at 2.25 eV and 2.65 eV. The results are compared with other spectroscopic data.

引用

页码：421 / 425

页数：5

共 18 条

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