CHARACTERIZATION OF UHV PREPARED SB OVERLAYERS ON (110) SURFACES OF III-V SEMICONDUCTORS

被引：35

作者：

HUNERMANN, M

PLETSCHEN, W

RESCH, U

RETTWEILER, U

RICHTER, W

GEURTS, J

LAUTENSCHLAGER, P

机构：

[1] IBM CORP,FORSCHUNGSLAB ZURICH,CH-8803 RUSCHLIKON,SWITZERLAND

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

SURFACE SCIENCE | 1987年 / 189卷

关键词：

D O I：

10.1016/S0039-6028(87)80449-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：322 / 330

页数：9

共 15 条

[1] OPTICAL PROPERTIES + BAND STRUCTURE OF GROUP 4-6 + GROUP 5 MATERIALS [J].

CARDONA, M ;

GREENAWAY, DL .

PHYSICAL REVIEW, 1964, 133 (6A) :1685-+

[2] LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110) [J].

CARELLI, J ;

KAHN, A .

SURFACE SCIENCE, 1982, 116 (02) :380-390

[3] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].

DUKE, CB ;

PATON, A ;

FORD, WK ;

KAHN, A ;

CARELLI, J .

PHYSICAL REVIEW B, 1982, 26 (02) :803-814

[4]

ESSER N, IN PRESS J VACUUM B

[5] RAMAN-SCATTERING PROPERTIES OF AMORPHOUS AS AND SB [J].

LANNIN, JS .

PHYSICAL REVIEW B, 1977, 15 (08) :3863-3871

[6] RAMAN EFFECT IN CRYSTALS [J].

LOUDON, R .

ADVANCES IN PHYSICS, 1964, 13 (52) :423-&

[7] SB OVERLAYERS ON (110) SURFACES OF III-V SEMICONDUCTORS - A NEW TYPE OF CHEMICAL-BOND [J].

MAILHIOT, C ;

DUKE, CB ;

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :915-917

[8]

MARTENSSON P, 1986, PHYS REV B, V33, P7399, DOI 10.1103/PhysRevB.33.7399

[9] SB OVERLAYERS ON GAAS(110) [J].

PLETSCHEN, W ;

ESSER, N ;

MUNDER, H ;

ZAHN, D ;

GEURTS, J ;

RICHTER, W .

SURFACE SCIENCE, 1986, 178 (1-3) :140-148

[10]

Pletschen W., 1987, 18th International Conference on the Physics of Semiconductors, P367

← 1 2 →