LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110)

被引：94

作者：

CARELLI, J

KAHN, A

机构：

来源：

SURFACE SCIENCE | 1982年 / 116卷 / 02期

关键词：

D O I：

10.1016/0039-6028(82)90441-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：380 / 390

页数：11

共 16 条

[1] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
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MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[2] Duke C.B., 1974, ADV CHEM PHYS, V27, P1
[3] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL
DUKE, CB
PATON, A
MEYER, RJ
BRILLSON, LJ
KAHN, A
KANANI, D
CARELLI, J
YEH, JL
MARGARITONDO, G
KATNANI, AD
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (06) : 440 - 443
[4] HENZLER M, 1977, ELECTRON SPECTROSCOP
[5] ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS
KAHN, A
CARELLI, J
KANANI, D
DUKE, CB
PATON, A
BRILLSON, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 331 - 334
[6] Kahn A., 1981, SOLID STATE COMMUN, V38, P1269
[7] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES
LUDEKE, R
LANDGREN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 667 - 673
[8] APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS - GAAS(110) AND ZNSE(110)
MARK, P
CISNEROS, G
BONN, M
KAHN, A
DUKE, CB
PATON, A
LUBINSKY, AR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 910 - 916
[9] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS
MEYER, RJ
DUKE, CB
PATON, A
KAHN, A
SO, E
YEH, JL
MARK, P
[J]. PHYSICAL REVIEW B, 1979, 19 (10) : 5194 - 5205
[10] DESORPTION PROPERTIES OF SB ON A GAAS (100) SURFACE
NAGANUMA, M
MIYAZAWA, S
IWASAKI, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 606 - 608

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