SCATTERING BY POLAR-OPTICAL PHONONS IN A QUASI-2-DIMENSIONAL SEMICONDUCTOR

被引：64

作者：

FERRY, DK

机构：

来源：

SURFACE SCIENCE | 1978年 / 75卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90054-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：86 / 91

页数：6

共 32 条

[1] ENERGY AND LIFETIME OF SPACE-CHARGE-INDUCED LOCALIZED STATES [J].

ALFERIEFF, ME ;

DUKE, CB .

PHYSICAL REVIEW, 1968, 168 (03) :832-+

[2] IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS [J].

BERZ, F .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :903-&

[3] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J].

BIRMAN, JL ;

LAX, M ;

LOUDON, R .

PHYSICAL REVIEW, 1966, 145 (02) :620-&

[4] EFFECT OF CHARGE INHOMOGENEITIES ON SILICON SURFACE MOBILITY [J].

CHENG, YC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2425-2427

[5]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[6]

DARR A, 1975, SOLID STATE COMMUN, V17, P455

[7] OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J].

DUKE, CB .

PHYSICAL REVIEW, 1967, 159 (03) :632-+

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[9] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS [J].

EZAWA, H ;

KAWAJI, S ;

NAKAMURA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :126-155

[10] ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].

EZAWA, H ;

KAWAJI, S ;

KURODA, T ;

NAKAMURA, K .

SURFACE SCIENCE, 1971, 24 (02) :659-&

← 1 2 3 4 →