EVIDENCE FOR A LANDE-FACTOR G=2 IN N-TYPE INVERTED SILICON MOSFET SURFACES

The determination of the spin splitting in quantities of the cyclotron energy in quantizing electric and magnetic fields from the application of the “tilted field method” on n‐type inverted silicon MOSFET surfaces is re‐examined under the additional consideration of a finite valley splitting. The procedure shows up to be very complicated since various important parameters and their angular variation are not known exactly. The summary of a series of different experiments yields an almost equal number of differing results for the g‐factor evaluated from the particular cases for M* ==g · mc/(2m0 cos ξ) =1/2 and 1, even after an exact correction of the data. The assumption of an interaction of the two “inner” of the four broadened levels belonging to a Landau quantum number n and a modification of the line shapes in their interspace allows a complete discussion of all data on the basis of a g‐factor equal to 2. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA