DETERMINATION OF G-FACTOR OF ELECTRONS IN N-TYPE SILICON SURFACE INVERSION LAYERS

被引：25

作者：

KOBAYASHI, M

KOMATSUBARA, KF

机构：

[1] NATL LAB HIGH ENERGY PHYS, TSUKUBA, IBARAKI, JAPAN

[2] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 13卷 / 03期

关键词：

D O I：

10.1016/0038-1098(73)90594-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：293 / 296

页数：4

相关论文

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[5] G-FACTOR FOR ELECTRONS IN N-TYPE SILICON SURFACE INVERSION LAYERS
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