G-FACTOR FOR ELECTRONS IN N-TYPE SILICON SURFACE INVERSION LAYERS

被引：10

作者：

NARITA, K ^{[1
]}

TAKAOKA, S ^{[1
]}

KOMATSUB.KF ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1098(73)90147-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1221 / 1224

页数：4

共 11 条

[1] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS
FANG, FF
STILES, PJ
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 823 - &
[2] HOWARD WM, UNPUBLISHED
[3] G FACTOR OF 2-DIMENSIONAL INTERACTING ELECTRON GAS
JANAK, JF
[J]. PHYSICAL REVIEW, 1969, 178 (03): : 1416 - &
[4] KOBAYASHI M, TO BE PUBLISHED
[5] KOMATSUBARA KF, UNPUBLISHED
[6] MAEDA H, UNPUBLISHED
[7] NARITA K, TO BE PUBLISHED
[8] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[10] TRANSVERSE HALL EFFECT IN ELECTRIC QUANTUM LIMIT
STERN, F
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (25) : 1687 - &