MIRIRS STUDIES OF THE GROWTH OF SI AND SI-GE ALLOYS FROM MOLECULAR PRECURSORS

被引：38

作者：

WU, YM ^{[1
]}

BAKER, J ^{[1
]}

HAMILTON, P ^{[1
]}

NIX, RM ^{[1
]}

机构：

[1] UNIV LONDON,QUEEN MARY & WESTFIELD COLL,DEPT CHEM,MILE END RD,LONDON E1 4NS,ENGLAND

来源：

SURFACE SCIENCE | 1993年 / 295卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(93)90189-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of hydrogen and disilane on Si(100), Ge/Si9(100) and Si-Ge/Si(100) surfaces. and the evolution with temperature of these adsorption systems, has been followed by multiple internal reflection IR spectroscopy (MIRIRS). The initial dissociative adsorption of disilane at 300 K is similar on both Si and Ge surfaces, but the presence of surface germanium opens up a much more facile route for monohydride decomposition and hydrogen desorption.

引用

页码：133 / 142

页数：10

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