DETERMINATION OF CONCENTRATION OF SUBSTITUTIONAL-O IN GAP BY MEANS OF DONOR - ACCEPTOR PAIR LUMINESCENCE

被引：1

作者：

BINDEMANN, R ^{[1
]}

FISCHER, H ^{[1
]}

KREHER, K ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT PHYS,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 43卷 / 02期

关键词：

D O I：

10.1002/pssa.2210430221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：529 / 533

页数：5

共 25 条

[1] EVIDENCE FOR A PRIMARILY NONRADIATIVE SIO DEFECT IN GAP [J].

BACHRACH, RZ ;

LORIMOR, OG ;

DAWSON, LR ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5098-5101

[2]

BHARGAVA RN, 1971, PHILIPS TECH REV, V32, P261

[3] SPECTRAL INTENSITY DISTRIBUTION OF DONOR-ACCEPTOR PAIR RECOMBINATION IN GAP [J].

BINDEMAN.R ;

UNGER, K .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01) :133-143

[4] OBSERVATION OF NONEXPONENTIAL LONG-TIME DECAY OF DONOR-ACCEPTOR PAIR LUMINESCENCE IN GAP [J].

BINDEMANN, R ;

FISCHER, H ;

KREHER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01) :K63-K65

[5]

BINDEMANN R, TO BE PUBLISHED

[6] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J].

BJORKLUND, G ;

GRIMMEISS, HG .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :589-+

[7]

DEAN PJ, 1969, APPL SOLID STATE SCI, V1

[8] CHARACTERIZATION OF DOMINANT RECOMBINATION CENTERS IN SEMICONDUCTORS FROM TEMPERATURE DEPENDENCE OF LUMINESCENCE EXCITATION-SPECTRA - GAP(ZN,O) [J].

DISHMAN, JM .

PHYSICAL REVIEW B, 1972, 5 (06) :2258-&

[9] LUMINESCENCE AND MINORITY CARRIER RECOMBINATION IN P-TYPE GAP(ZN,O) [J].

DISHMAN, JM ;

DIDOMENI.M ;

CARUSO, R .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1988-+

[10]

Fischer H., 1977, Jena Review, V22, P239

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