RAPID THERMAL HYDROGEN PASSIVATION OF POLYSILICON MOSFETS

被引：5

作者：

BATRA, S ^{[1
]}

PARK, K ^{[1
]}

BANERJEE, S ^{[1
]}

KWONG, D ^{[1
]}

TASCH, A ^{[1
]}

RODDER, M ^{[1
]}

SUNDARESAN, R ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, DALLAS, TX 75265 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

关键词：

D O I：

10.1109/55.55247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Passivation of polysilicon grain boundaries by atomic hydrogen is a well-established technique to improve polysilicon transistor performance. The improvement results from a lowering of the grain-boundary potential barrier height and the surface-state density due to saturation of the silicon dangling bonds with hydrogen. This paper demonstrates the effectiveness of rapid thermal annealing as a passivation technique using Si3N4 as a solid source of H. Polysilicon MOSFET’s with an ON/OFF ratio of 107 can be obtained through rapid thermal hydrogen passivation compared to an ON/OFF ratio of 106 after furnace passivation. The improvement of subthreshold slope, threshold voltage, and channel transconductance compared to unpassivated MOSFET’s is greater for rapid thermal annealing (RTA) than for furnace passivation. © 1990 IEEE

引用

页码：194 / 196

页数：3

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