HOT-ELECTRON DEGRADATION OF N-CHANNEL POLYSILICON MOSFETS

被引：54

作者：

BANERJEE, S

SUNDARESAN, R

SHICHIJO, H

MALHI, S

机构：

[1] TEXAS INSTRUMENTS INC, CTR SEMICOND PROC & DESIGN, DALLAS, TX 75265 USA

[2] TEXAS INSTRUMENTS INC, TECH STAFF, MEMORY CONCEPTS PROGRAM, DALLAS, TX 75265 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 02期

关键词：

D O I：

10.1109/16.2434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：152 / 157

页数：6

共 11 条

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