INSTABILITY MECHANISM IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：36

作者：

SCHROPP, REI

VERWEY, JF

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.97656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：185 / 187

页数：3

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