CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS

被引：287

作者：

POWELL, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.94399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：597 / 599

页数：3

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